United States


Based on DFT and NEGF computation, we explored that Ar and N2 do not
change captured properties of pristine graphene devices. However, they can influence the captured properties of graphene with point defects like carbon vacancy and stone wales defect, which are present inherently in the material. Thus, we can say that Ar and N2 gas
does not provide a completely inert environment for graphene.



DRC 2022

Late News: Are Argon and Nitrogen Gases Really Inert to Graphene Devices

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**WELCOME TO THE 2021 CAP VIRTUAL CONGRESS UNDERLINE PLATFORM**

The CAP staff and our organizing and program committees are pleased to welcome you to our 2021 Congress filled with plenary talks, technical sessions/talks, student presentations and competition sessions, workshops, and several symposia offered by the CAP divisions and its partners.  

You will also have opportunities to network with other delegates through the Gathertown platform accessed by selecting the lounge or posters button on the left.

Registered delegates should use the schedule button to call up the details of the session/event they wish to attend.  Each sessions includes a link to access the online platform where the event is taking place, either within Underline or through other Congress-related Zoom meetings.  

Invited speaker talks are identified with an (I), and student competitors include a (G*) or (U*) to identify graduate or undergraduate presenters.

Please take the time to check out the information about our sponsors and exhibitors, request further information, or leave a note of thanks for their support.

General information about the Congress can be found on the CAP website Congress pages at https://www.cap.ca/congress/2021.

Looking for a specific talk?   A full searchable list is available on our Indico Congress site at https://indico.cern.ch/event/985448/contributions/

We look forward to sharing this exciting week with you!


CAP Virtual Congress 2021

poster

[![](https://assets.underline.io/uploads/markdown_image/1/image/985c8a40b04e56675221c8549975de3c.png)](https://drive.google.com/file/d/1B70nPIeeeqdG4UU70NlYXuKVOHLRuJEo/view?usp=sharing)

### ** History of DRC**
The Device Research Conference (DRC) began in the pre-transistor era with the 1942 establishment of the Conference on Electron Device Research (CEDR). Following William Shockley’s 1948 CEDR presentation of the transistor device, the Solid-State Device Research Conference (SSDRC) was established, with invitation-only attendance.

In the ensuing decades, many exciting firsts were presented at SSDRC, including the use of impurity diffusion in silicon and germanium, the first practical MOSFET, and the first lattice-matched heterojunction.

In 1969, under the leadership or Herbert Kroemer and Cal Quate, the CEDR and SSDRC merged into DRC. In 1970, attendance was opened to all, and the first DRAM (dynamic random-access memory), room temperature lasers, and first CCD (charge-coupled device) were reported—all in the same 1970 DRC meeting!

1976 saw the first official coordination of tandem meetings between DRC and the Electronic Materials Conference (EMC) to bring together the electronic materials and device communities—a custom which persists to this day. In 1991, DRC began publishing its digest with IEEE; they can all be found [here on IEEE Xplore](https://ieeexplore.ieee.org/xpl/conhome/1000199/all-proceedings). Throughout this period, DRC featured reports of many novel and record-setting devices, including the HEMT (High Electron Mobility Transistor), VCSEL (Vertical Cavity Surface Emitting Laser), HBT (Heterojunction Bipolar Transistor), and nanoscale MOSFETs.

In recent years, DRC has continued to be the world’s premier forum to present innovative semiconductor device research with work on organic thin film transistors, graphene and carbon nanotube transistors, and 2D materials all featuring prominently in the 1990s through to the present day. In 2017, we celebrated DRC’s 75th anniversary with special sessions and an [article in the Journal of the Electron Device Society](https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8168249&isnumber=8232486). DRC technical topics continue to evolve with emerging device trends such as memory devices, quantum devices, optoelectronics/photonics, and wide bandgap power devices to reflect the exciting work being done by a diverse community of device engineers around the globe.

Today, as we look forward to the next 75+ years of device innovation, DRC continues to lead the way in showcasing top-caliber research, facilitating vibrant discussion and debate and acting as a platform to nurture the next generation of device engineers. We welcome you to join us at the next DRC!

To learn more about DRC's history, please see [Aaron Franklin, Debdeep Jena and Deji Akinwande, "75 Years of the Device Research Conference—A History Worth Repeating," in IEEE Journal of the Electron Devices Society, vol. 6, pp. 116-120, 2018. doi: 10.1109/JEDS.2017.2780778](https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8168249&isnumber=8232486).

### **Topics**
* Biological Devices
* Devices for Extreme Conditions
* Heterogeneously Integrated Devices
* Memory Devices
* Modeling and Simulation of Devices
* Nanoscale and Vacuum Devices
* Optoelectronic and Optical Devices
* Other Emerging Devices
* Power Devices
* Quantum Devices
* RF and Terahertz Devices
* Spintronic and Magnetic Devices
* Thin-film Devices
* Wide-bandgap Devices
 
### **Invited Speakers**
* Patrick Fay, University of Notre Dame
* Susanne Hoffmann-Eifert, Peter Grünberg Institute
* Sanghyeon Kim, Korea Advanced Institute of Science and Technology
* Sriram Krishnamoorthy, University of California, Santa Barbara
* Mario Lanza, King Abdullah University of Science and Technology
* Xiuling Li, The University of Texas at Austin
* Marko Radosavljevic, Intel Corporation
* Siddharth Rajan, The Ohio State University
* Giordano Scappucci, Delft University of Technology
* Fisher Yu, University of Arkansas
* Wenjuan Zhu, University of Illinois at Urbana-Champaign




Registration is required to attend this event. If you have not already done so, please use the link below to register for a ticket to the conference:

https://www.mrs.org/drc-2022/registration

Registration Is Required

DRC continues to be the world’s premier forum to present innovative semiconductor device research with work on organic thin film transistors, graphene and carbon nanotube transistors, and 2D materials all featuring prominently in the 1990s through to the present day. In 2017, we celebrated DRC’s 75th anniversary with special sessions and an article in the Journal of the Electron Device Society. 
DRC technical topics continue to evolve with emerging device trends such as memory devices, quantum devices, optoelectronics/photonics, and wide bandgap power devices to reflect the exciting work being done by a diverse community of device engineers around the globe.

Gallium Oxide is an emerging ultra-wide band gap semiconductor with promising material properties relevant for high performance power electronic devices. State-of-the-art electron mobilities, contact resistance values, breakdown voltages and power figures of merit are demonstrated in β-Ga2O3 epitaxial films and devices.

High Performance Homoepitaxial Gallium Oxide Power Devices on Bulk and Composite Substrates

A Superconducting nanowire (ScNW) is among the most promising superconducting devices with possible applications in several avenues of cryogenic electronics. Recent demonstrations proved that the ScNWs can be utilized to design cryogenic oscillators, with possible usage in cryo-neuromorphic systems. The dynamics of the ScNW oscillator is unlike any other non-SC oscillator. Hence, a systematic design space expiration is highly necessary. In this work, we conduct a simulation-based study of the ScNW oscillators to identify the material/device-circuit co-design opportunities.

Design Space Analysis of Superconducting Nanowire-based Cryogenic Oscillators

Up-scaling of quantum information processors requires the cryogenic control CMOS devices to be operated in the few millivolt regime. However, MOSFETs show inverse subthreshold slope SS values which saturate well above the theoretical Boltzmann limit at cryogenic temperatures. In addition to this saturation of SS caused by band tailing, inflection degrades SS as a function of the gate voltage. We show gate stack engineering as an approach to counteract those phenomena which facilitate the realization of steep slope cryogenic MOSFETs.

Interface Engineering for Steep Slope Cryogenic MOSFETs

We report in this work the GaN camel diode varactors which show good breakdown voltage, low reverse current density and good quality factor. This varactor technology combining has potential to be applied to RF front-ends where high power handling capability is imperative.

Free-Standing High Power GaN Multi-Fin Camel Diode Varactors

This work reports the first radio frequency (RF) characterization of ultra-thin ALD-grown amorphous indium oxide transistors down to 150 nm channel lengths. Record RF performance among amorphous oxide semiconductors is achieved including operation up to 22 GHz.

Record RF Performance of Ultra-thin Indium Oxide Transistors with Buried-gate Structure

We report for the first time that a single sub-nanosecond pulse can fully switch HfO2-based FeFET. We also study the polarization switching kinetics across 11 orders of magnitude in time and find an extremely steep time-voltage relation, which is captured by the domain nucleation model across this wide range of pulse widths

Sub-Nanosecond Switching of Si:HfO2 Ferroelectric Field-Effect Transistor

In this article, a novel FeFET with buried channel is proposed. Through TCAD simulations with the calibrated FE parameters, it is found that BC-FeFET opens up the path to eliminate ILD, leading to higher electric field in the FE layer and efficient polarization. An optimized BC-FeFET with ~3X higher memory window along with ~3X lower operating voltage range compared to the baseline FeFET is demonstrated. Moreover, as the channel is buried under a depletion layer, electron density at surface is reduced significantly during erase and read operation implying lower electron trapping/detrapping which can improve the endurance of the cell.

Buried-Channel Ferroelectric FET as Energy Efficient and Reliable 1T-NVM

Multilevel cell (MLC) Resistive Random Access Memory (RRAM) is an attractive technology option to realize ultra-high density, low-power memory arrays. Traditional 1-transistor 1-resistor (1T1R) bitcell suffers from adjacent state overlap due to the inherent RRAM variations which hinders the realization of MLC capability. In this work, we evaluate an alternate 2-transistor 1-resistor (2T1R) gain-cell RRAM bitcell topology that has higher read-out dynamic range and exhibits higher process variation tolerance compared to the baseline 1T1R bitcell.

Statistical Analysis of 2T1R Gain-Cell RRAM Bitcell for Area Efficient, High-Performance, and Reliable Multi-level Cell Operation

Movement of Current Filaments and its Impact on Avalanche Robustness in Vertical GaN P-N diode Under UIS stress

We present a simple composite analytical model that covers the entire electric-field range with excellent accuracy, with the use of an empirically-derived extrapolation function in the TFE-to-FE transition region. The composite TE-TFE-FE model successfully bridges the gap between TFE and FE regimes, allowing for accurate modeling of the Schottky barrier reverse current across the entire electric-field range. The closed-form and local nature of the composite model allows for easy implementation in TCAD tools for device design and analysis.

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Next from DRC 2022

High Performance Homoepitaxial Gallium Oxide Power Devices on Bulk and Composite Substrates

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Fundamental study of plasma-graphene interactions in Argon/B2H6 plasma

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